Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope
Article first published online: 24 JUN 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 9, pages 1914–1919, September 2013
How to Cite
Larki, F., Dehzangi, A., Saion, E. B., Abedini, A., Hutagalung, S. D., Abdullah, A. M. and Hamidon, M. N. (2013), Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope. Phys. Status Solidi A, 210: 1914–1919. doi: 10.1002/pssa.201228775
- Issue published online: 14 SEP 2013
- Article first published online: 24 JUN 2013
- Manuscript Accepted: 10 MAY 2013
- Manuscript Revised: 17 APR 2013
- Manuscript Received: 14 NOV 2012
- UKM. Grant Number: “DANA IMPAC PERDANA, DIP-2012-16”
- USM RU. Grant Number: 1001/PBAHAN/814167
- Ministry of Science, Technology and Innovation (MOSTI), Malaysia. Grant Number: 03-01-05-SF0384
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