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Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells

Authors

  • Zhao Si,

    Corresponding author
    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
    • Phone: +86 10 82305493, Fax: +86 10 82305341
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  • Tongbo Wei,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Jianchang Yan,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Jun Ma,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Ning Zhang,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Zhe Liu,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Xuecheng Wei,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Xiaodong Wang,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Hongxi Lu,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Junxi Wang,

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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  • Jinmin Li

    1. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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Abstract

A study on the effect of Mg doping in quantum-well (QW) layers on dual-wavelength light-emitting diodes (LEDs) was performed. A series of dual-wavelength LEDs with different Mg doping conditions were fabricated. According to electroluminescence measurement, as the Mg doping concentration and regions varied, improved hole distribution and bottom-QW emission was achieved. This result is in accord with APSYS simulation. In addition, the sample with Mg doping in all QWs showed the highest output power and smallest efficiency droop. It is concluded that Mg doping in QWs could ameliorate the optical and electrical properties of dual-wavelength LEDs.

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