Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells
Version of Record online: 17 DEC 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 3, pages 559–562, March 2013
How to Cite
Si, Z., Wei, T., Yan, J., Ma, J., Zhang, N., Liu, Z., Wei, X., Wang, X., Lu, H., Wang, J. and Li, J. (2013), Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells. Phys. Status Solidi A, 210: 559–562. doi: 10.1002/pssa.201228777
- Issue online: 6 MAR 2013
- Version of Record online: 17 DEC 2012
- Manuscript Accepted: 29 NOV 2012
- Manuscript Revised: 15 NOV 2012
- Manuscript Received: 30 OCT 2012
- National Nature Science Foundation of China. Grant Numbers: 61006038, 61274040
- National High Technology Research and Development Program of China. Grant Number: 2011AA03A111
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