Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures
Article first published online: 30 APR 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 8, pages 1657–1662, August 2013
How to Cite
Mickevičius, J., Dobrovolskas, D., Šimonytė, I., Tamulaitis, G., Chen, C.-Y., Liao, C.-H., Chen, H.-S. and Yang, C. C. (2013), Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures. Phys. Status Solidi A, 210: 1657–1662. doi: 10.1002/pssa.201228824
- Issue published online: 14 AUG 2013
- Article first published online: 30 APR 2013
- Manuscript Accepted: 5 APR 2013
- Manuscript Revised: 18 MAR 2013
- Manuscript Received: 11 DEC 2012
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