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Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures


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This study experimentally investigates the ability of Bi2O3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.

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