PECVD Al2O3/a-Si:B as a dopant source and surface passivation
Version of Record online: 16 APR 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 8, pages 1593–1599, August 2013
How to Cite
Seiffe, J., Gahoi, A., Hofmann, M., Rentsch, J. and Preu, R. (2013), PECVD Al2O3/a-Si:B as a dopant source and surface passivation. Phys. Status Solidi A, 210: 1593–1599. doi: 10.1002/pssa.201228850
- Issue online: 14 AUG 2013
- Version of Record online: 16 APR 2013
- Manuscript Accepted: 19 MAR 2013
- Manuscript Revised: 18 MAR 2013
- Manuscript Received: 20 DEC 2012
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