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Optical study of carrier diffusion and recombination in CVD diamond



We report on the measurements of nonequilibrium carrier dynamics in monocrystalline diamond prepared by the chemical vapor deposition (CVD) technique. Nonlinearly excited laser-induced transient grating (LITG) and time-resolved photoluminescence (PL) were used for investigation of carrier diffusion and recombination. Diffusion constant was observed to be strongly dependent on the sample temperature and carrier density (D = 2.5–35 cm2 s−1) what was explained in terms of the density dependent carrier-carrier scattering. The new method based on the time-resolved PL was proposed for measuring the diffusion and recombination dynamics of excitons. The measured exciton lifetime τFE = 700–800 ns was temperature independent between 100 and 295 K.