Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers
Version of Record online: 30 JUL 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 10, pages 2022–2027, October 2013
How to Cite
Ščajev, P., Nargelas, S., Jarašiūnas, K., Kisialiou, I., Ivakin, E., Deferme, W., D'Haen, J. and Haenen, K. (2013), Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers. Phys. Status Solidi A, 210: 2022–2027. doi: 10.1002/pssa.201300046
- Issue online: 18 OCT 2013
- Version of Record online: 30 JUL 2013
- Manuscript Accepted: 31 MAY 2013
- Manuscript Revised: 30 APR 2013
- Manuscript Received: 1 APR 2013
- Lithuanian Science Council. Grant Number: TAP LLT 05/2012
- Research Foundation-Flanders G.0555.10N EU FP7
- Marie Curie ITN “MATCON” PITN-GA-. Grant Number: 2009-238201
- Collaborative Project “DIAMANT”. Grant Number: 270197
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