CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires
Version of Record online: 28 APR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 9, pages 2115–2120, September 2014
How to Cite
Salazar, R., Delamoreanu, A., Saidi, B., Lévy-Clément, C. and Ivanova, V. (2014), CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires. Phys. Status Solidi A, 211: 2115–2120. doi: 10.1002/pssa.201300632
- Issue online: 8 SEP 2014
- Version of Record online: 28 APR 2014
- Manuscript Accepted: 11 MAR 2014
- Manuscript Revised: 11 DEC 2013
- Manuscript Received: 30 SEP 2013
- CONACYT Mexico
- core/shell heterostructures;
In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures.
CdTe extremely thin film deposited by SILAR method onto ZnO nanowire.