SEARCH

SEARCH BY CITATION

Properties of manganite/ruthenate superlattices with ultrathin layers

  1. Top of page
  2. Properties of manganite/ruthenate superlattices with ultrathin layers
  3. Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics
  4. Mott–Hubbard transition in V2O3 revisited

Michael Ziese and Ionela Vrejoiu

High-quality manganite/ruthenate superlattices were grown by pulsed laser deposition and studied by structural techniques as well as magnetization and magnetotransport measurements. Here, the authors review the complex behavior of these systems ranging from structural transitions of the ruthenate layers to antiferromagnetic coupling phenomena, an unprecedented Curie temperature stabilization of the manganite layers and intriguing interfacial magnetotransport effects. These findings highlight that the manganite/ruthenate interface serves as a model system for the study of interfacial reconstruction and charge transfer in highly correlated ferromagnets.

Phys. Status Solidi RRL (2013) DOI 10.1002/pssr.201307007

Thumbnail image of

Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics

  1. Top of page
  2. Properties of manganite/ruthenate superlattices with ultrathin layers
  3. Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics
  4. Mott–Hubbard transition in V2O3 revisited

Kenjiro Fukuda, Tatsuya Suzuki, Takuma Kobayashi, Daisuke Kumaki, and Shizuo Tokito

In this study, bias stress effects are investigated in organic thin-film transistor devices with bilayer gate dielectric constructions consisting of two layers possessing opposite bias stress tendencies. These bias stress effects closely correlate with the thickness ratio of the two dielectric layers, such that threshold voltage shifts can be described as a linear function for the capacitive ratio of the two dielectric layers. A new method for almost completely suppressing the bias stress effects and providing long-term operational stability in organic thin-film transistors is also provided.

Phys. Status Solidi A (2013) DOI 10.1002/pssa.201228811

Thumbnail image of

Mott–Hubbard transition in V2O3 revisited

  1. Top of page
  2. Properties of manganite/ruthenate superlattices with ultrathin layers
  3. Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics
  4. Mott–Hubbard transition in V2O3 revisited

P. Hansmann, A. Toschi, G. Sangiovanni, T. Saha-Dasgupta, S. Lupi, M. Marsi, and K. Held

In this Feature Article, Hansmann et al. review recent calculations and experiments which shed a new light on the famous Mott–Hubbard transition in V2O3. Old paradigms, such as the pressure-doping equivalence need to be changed. The picture shows that, on the microscale, “metallic” Cr-doped V2O3 is actually phase separated into metallic islands (red) intermixed with insulating regions (blue).

Phys. Status Solidi B (2013) DOI 10.1002/pssb.201248476

Thumbnail image of