Cross-sectional TEM imaging of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates
Article first published online: 29 MAY 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 9, pages 1738–1744, September 2013
How to Cite
Nakagomi, S. and Kokubun, Y. (2013), Cross-sectional TEM imaging of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates. Phys. Status Solidi A, 210: 1738–1744. doi: 10.1002/pssa.201329040
- Issue published online: 14 SEP 2013
- Article first published online: 29 MAY 2013
- Manuscript Accepted: 26 APR 2013
- Manuscript Revised: 24 APR 2013
- Manuscript Received: 17 JAN 2013
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