Get access

Al+-doping of Si by laser ablation of Al2O3/SiN passivation

Authors

  • Nils-Peter Harder,

    Corresponding author
    1. Institute of Electronic Materials and Devices (MBE), Universität Hannover, Hannover, Germany
    • Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, Emmerthal, Germany
    Search for more papers by this author
  • Yevgeniya Larionova,

    1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, Emmerthal, Germany
    Search for more papers by this author
  • Rolf Brendel

    1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, Emmerthal, Germany
    2. Institute of Solid-State Physics, University of Hannover, Hannover, Germany
    Search for more papers by this author

Corresponding author: e-mail: harder@isfh.de, Phone: +49 5151 999 631, Fax: ++49 5151 999 400

Abstract

We show that one-pulse laser-ablation of Al2O3/SiNx layer stacks from silicon wafers can produce substantial p+-type Al-doped regions in the substrate. We present doping profile measurements which show that the Al-doping profiles of the laser-treated region strongly depend on the laser ablation parameters and thickness of the Al2O3 layer. We find for non-passivated laser Al-doping profiles with sheet resistance Rsheet = 180 Ω □−1 a saturation current densities J0,surf = 4 pA cm−2, which is approximately the same recombination activity as that of a boron furnace diffused layer of the same sheet resistance.

Get access to the full text of this article

Ancillary