Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors
Version of Record online: 2 MAY 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 9, pages 1745–1749, September 2013
How to Cite
Lee, J.-S., Song, S.-M., Kim, Y.-H., Kwon, J.-Y. and Han, M.-K. (2013), Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors. Phys. Status Solidi A, 210: 1745–1749. doi: 10.1002/pssa.201329170
- Issue online: 14 SEP 2013
- Version of Record online: 2 MAY 2013
- Manuscript Accepted: 12 APR 2013
- Manuscript Revised: 11 MAR 2013
- Manuscript Received: 23 NOV 2012
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