Thermoelectric properties of Sb-doped Mg2Si0.59Sn0.41 solid solutions



N-type Mg2Si0.59 − xSn0.41Sbx (0 ≤ x ≤ 0.01) solid solutions were prepared by melting elemental metals in sealed tantalum tubes followed by hot pressing. The electrical conductivity, Seebeck coefficient, and thermal conductivity have been measured as a function of temperature from 300 to 770 K. The electron effective mass and electron concentration increase with increasing Sb doping amount. The Sb doping enhances the concentration of Mg vacancies, which reduces the electron concentration. The maximum dimensionless figure of merit is 0.68 at 693 K for the x = 0.005 sample.