Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors
Version of Record online: 1 JUL 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 10, pages 2111–2120, October 2013
How to Cite
Padma, N., Sawant, S. N., Sudarsan, V., Sen, S. and Gupta, S. K. (2013), Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors. Phys. Status Solidi A, 210: 2111–2120. doi: 10.1002/pssa.201329211
- Issue online: 18 OCT 2013
- Version of Record online: 1 JUL 2013
- Manuscript Accepted: 31 MAY 2013
- Manuscript Received: 30 MAR 2013
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