Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si
Article first published online: 17 SEP 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 12, pages 2592–2599, December 2013
How to Cite
Zhang, X., Fu, M., Ma, X., Yang, D. and Vanhellemont, J. (2013), Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si. Phys. Status Solidi A, 210: 2592–2599. doi: 10.1002/pssa.201329221
- Issue published online: 11 DEC 2013
- Article first published online: 17 SEP 2013
- Manuscript Accepted: 1 AUG 2013
- Manuscript Revised: 17 JUN 2013
- Manuscript Received: 2 APR 2013
- NSFC. Grant Numbers: 50832006, 50672085
- National Science and Technology Major Project. Grant Number: 2010ZX02301003
- 973 Program. Grant Number: 2007CB613403
- Zhejiang Provincial Natural Science Fund. Grant Number: R4090055
- FWO. Grant Number: VS.040.11N
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