Enhancing air stability of pentacene-based OTFTs with pentacene double layer

Authors

  • Dipok Saikia,

    Corresponding author
    1. Material Science Laboratory, Department of Physics, Sibsagar College, Joysagar, Assam, India
    2. Department of Physics, Dibrugarh University, Dibrugarh, Assam, India
    3. Thin Film Laboratory, Department of Physics, J B College, Jorhat, Assam, India
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  • Prasana K. Saikia

    1. Department of Physics, Dibrugarh University, Dibrugarh, Assam, India
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Abstract

A new technique called a pentacene double layer is proposed in this paper to enhance the air stability of the pentacene-based OTFTs. A practically insulating amorphous layer of pentacene (P-II) deposited at very low substrate temperature is used as protective layer above the pentacene active layer (P-I) so that an encapsulation layer of SiO2 can be deposited without damaging the active layer. This technique reduced the probability of interaction of O2 and H2O with the active pentacene layer to zero during fabrication of the devices (multiple breakdown process), and hence can be fabricated without using nitrogen ambient chamber as a result the devices become highly cost effective.

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