FRL, Samsung Advanced Institute of Technology, Samsung Electronics, Gyeonggi-Do 446-712, South Korea.
Metal–insulator–silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating
Version of Record online: 12 SEP 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 11, pages 2510–2514, November 2013
How to Cite
Kim, H. and Bae, J. (2013), Metal–insulator–silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating. Phys. Status Solidi A, 210: 2510–2514. doi: 10.1002/pssa.201329323
- Issue online: 20 NOV 2013
- Version of Record online: 12 SEP 2013
- Manuscript Accepted: 6 AUG 2013
- Manuscript Revised: 1 AUG 2013
- Manuscript Received: 5 MAY 2013
- Gachon University Research Fund of 2013. Grant Number: GCU-2013-R201
- anti-reflective coating;
Novel ZnO nanocone anti-reflective coating (ARC) was realized on ITO-Si metal–insulator–semiconductor (MIS) photodetector. The ZnO nanocone-coated device demonstrated significant suppression of reflectance compared with that of a conventional planar device. The ZnO nanocone MIS photodetector showed a 15% enhanced external quantum efficiency (EQE) compared to a planar MIS photodetector, and indicated a flat response over a broad range of wavelength from the visible to IR spectra. In addition, the EQE of the nanocone device exhibited a stable response with respect to the angle of incidence, which indicates improved device characteristics of the ZnO nanocone ARC.