• InN;
  • intermediate layers;
  • lattice matched epitaxy;
  • molecular beam epitaxy;
  • silicon

We are able to grow high quality InN films on indium metal induced 1 × 1 and 7 × 7 superstructural phases of Si(111) at lower growth temperatures than those previously employed. With multi-technique characterization probes, we show the promising route to obtain better crystallinity and emission properties for films that are grown on the 1 × 1 surface reconstruction at 200 °C, as compared to those grown on 7 × 7 reconstruction. These effects are observed in a narrow growth parametric region, and attributed to the better integral match of the 2D unit cells with the substrate reconstruction. Further improvement in the quality of InN films is accomplished by growing InN on the above formed epitaxial layers as intermediate layers which display PL emission even at room temperature. The effect of structural quality, carrier concentration, and stoichiometry on band edge emission and electron mobility of these films, show us directions towards obtaining improved quality InN films.