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k32-type low-frequency bimorph with giant electromechanical coupling factor

Authors

  • Gang Liu,

    1. Center for Composite Materials, Harbin Institute of Technology, Harbin, P. R. China
    2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, USA
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  • Shiming Lei,

    1. Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin, P. R. China
    2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, USA
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  • Wenhua Jiang,

    1. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, USA
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  • Jiaqi Zhu,

    Corresponding author
    1. Center for Composite Materials, Harbin Institute of Technology, Harbin, P. R. China
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  • Wenwu Cao

    Corresponding author
    1. Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin, P. R. China
    2. Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, USA
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Abstract

Piezoelectric bimorph based on k32 mode of ternary 0.24Pb(In1/2Nb1/2)O3–0.46Pb(Mg1/3Nb2/3)O3–0.30PbTiO3 (0.24PIN–-0.46PMN–-0.30PT) single crystal poled along [011]c has been fabricated and tested. The bimorph features very large electromechanical coupling factor (0.80) and very low working frequency (less than half of PZT based bimorph for the same dimensions) owing to the super large lateral extensional piezoelectric constant d32 and large elastic compliances inline image of the crystal. The bimorph design can be used for miniaturized low-frequency electromechanical sensors and actuators.

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