Origin of ultraviolet electroluminescence in n-ZnO/p-GaN and n-MgZnO/p-GaN heterojunction light-emitting diodes
Version of Record online: 21 OCT 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 210, Issue 12, pages 2751–2755, December 2013
How to Cite
Liu, C., Xu, H., Ma, J. and Liu, Y. (2013), Origin of ultraviolet electroluminescence in n-ZnO/p-GaN and n-MgZnO/p-GaN heterojunction light-emitting diodes. Phys. Status Solidi A, 210: 2751–2755. doi: 10.1002/pssa.201330026
- Issue online: 11 DEC 2013
- Version of Record online: 21 OCT 2013
- Manuscript Accepted: 25 SEP 2013
- Manuscript Revised: 10 SEP 2013
- Manuscript Received: 10 JUN 2013
- NSFC. Grant Numbers: 51172041, 60907016
- Program for New Century Excellent Talents in University. Grant Numbers: NCET-11-0615, 2012CB933703, B13013
- Jilin Province. Grant Numbers: 20121802, 201201061, 20100339
- Fundamental Research Funds for the Central Universities. Grant Numbers: 11CXPY004, 11QNJJ011
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Figure S1. EDX spectrum of Mg0.2Zn0.8O film on c-sapphire.
Figure S2. EDX spectrum of Mg0.27Zn0.73O film on c-sapphire.
Figure S3. EDX spectrum of Mg0.332Zn0.67O film on c-sapphire.
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