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Fabrication of silicon nanostructures using metal-assisted etching in NaBF4

Authors

  • Nhung T. P. Nguyen,

    1. Institut de Recherche Interdisciplinaire (IRI, USR CNRS 3078), Parc de la Haute Borne, Villeneuve d'Ascq, France
    2. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN – UMR 8520), Cité Scientifique, Villeneuve d'Ascq, France
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  • Yannick Coffinier,

    1. Institut de Recherche Interdisciplinaire (IRI, USR CNRS 3078), Parc de la Haute Borne, Villeneuve d'Ascq, France
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  • Vincent Thomy,

    1. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN – UMR 8520), Cité Scientifique, Villeneuve d'Ascq, France
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  • Rabah Boukherroub

    Corresponding author
    1. Institut de Recherche Interdisciplinaire (IRI, USR CNRS 3078), Parc de la Haute Borne, Villeneuve d'Ascq, France
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Abstract

In this report, we demonstrate that sodium tetrafluoroborate (NaBF4) and silver nitrate (AgNO3) aqueous solution can be successfully used as wet etchant to produce silicon nanostructured layers with anti-reflective properties. The morphology of the resulting nanostructures was studied as a function of various etching parameters, including reactant concentrations, temperature, time, substrate orientation, and doping level. The resulting nanostructures have been characterized using scanning electron microscopy (SEM) and reflectivity measurements.

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