Evaluation of optimal chlorine doping concentration in zinc oxide on glass for application as new transparent conductive oxide

Authors

  • Jae-chul Lee,

    1. Department of Physics, Dongguk University, Chung-gu, Seoul, Korea
    2. Quantum Functional Semiconductor Research Center, Dongguk University, Chung-gu, Seoul-100-715, Korea
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  • Nagarajan Ganapathi Subramaniam,

    Corresponding author
    1. Quantum Functional Semiconductor Research Center, Dongguk University, Chung-gu, Seoul-100-715, Korea
    2. Nano Information Technology Academy, Dongguk University, Chung-gu, Seoul-100-715, Korea
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  • Ju-won Lee,

    1. Quantum Functional Semiconductor Research Center, Dongguk University, Chung-gu, Seoul-100-715, Korea
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  • Jae-choon Lee,

    1. Quantum Functional Semiconductor Research Center, Dongguk University, Chung-gu, Seoul-100-715, Korea
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  • Tae-won Kang

    1. Department of Physics, Dongguk University, Chung-gu, Seoul, Korea
    2. Quantum Functional Semiconductor Research Center, Dongguk University, Chung-gu, Seoul-100-715, Korea
    3. Nano Information Technology Academy, Dongguk University, Chung-gu, Seoul-100-715, Korea
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Abstract

ZnO:Cl thin films grown on glass substrates at 200 °C by the pulsed laser deposition (PLD) technique using ZnO:Cl targets show preferential c-axis (0002) orientation having hexagonal wurtzite structure without secondary phases. The chlorine concentration in the ZnO:Cl thin films is varied from 1.04 to 7.28 at%. X-ray photoelectron spectroscopy (XPS) studies indicate existence of Zn[BOND]O and Zn[BOND]Cl bonding. Hall effect measurements and UV–Visible absorption spectra show lowest resistivity of 6.12 × 10−4 Ω cm and average transmittance of 92% in the visible range for the 4.16 at% chlorine-doped ZnO thin film. Possible application of the material as a new transparent conductive zinc oxide is very much imminent in optoelectronic devices.

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