The physical nature of bipolar resistive switching in Pt/BiFe0.95Mn0.05O3/Pt memory devices

Authors

  • J. M. Luo,

    Corresponding author
    1. School of Physics and Optical Information Sciences, Jiaying University, Guangdong, P. R. China
    2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, P. R. China
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  • R. Q. Chen,

    1. Center of Experimental Teaching for Common Basic Courses, South China Agricultural University, Guangzhou, P. R. China
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  • S. P. Lin

    Corresponding author
    1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, P. R. China
    2. Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-sen University, Zhuhai, P. R. China
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Abstract

Pt/BiFe0.95Mn0.05O3/Pt memory devices show stable bipolar resistive switching characteristics with a resistance ratio of about 10 and a retention time of more than 103 s. Based on the analysis of current conduction, oxygen vacancies are supposed to play an important role in the formation of conducting path, and the temperature dependence of the resistance in the low-resistive state demonstrates that the resistance increases with temperature slightly. Additionally, on increasing the compliance current during the SET process, the resistance in the low-resistive state decreases while the RESET current increases. However, the RESET voltage is observed to be independent of the compliance current. These results can be explained by the conductive filament mechanism originating from the trapping and detrapping of electrons.

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