Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition
Article first published online: 18 NOV 2013
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 1, pages 40–47, January 2014
How to Cite
Splith, D., Müller, S., Schmidt, F., von Wenckstern, H., van Rensburg, J. J., Meyer, W. E. and Grundmann, M. (2014), Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition. Phys. Status Solidi A, 211: 40–47. doi: 10.1002/pssa.201330088
- Issue published online: 21 JAN 2014
- Article first published online: 18 NOV 2013
- Manuscript Accepted: 16 OCT 2013
- Manuscript Revised: 26 SEP 2013
- Manuscript Received: 30 JUN 2013
- EFRE SAB 100132251 Universität Leipzig
Options for accessing this content:
- If you are a society or association member and require assistance with obtaining online access instructions please contact our Journal Customer Services team.
- If your institution does not currently subscribe to this content, please recommend the title to your librarian.
- Login via other institutional login options http://onlinelibrary.wiley.com/login-options.
- You can purchase online access to this Article for a 24-hour period (price varies by title)
- New Users: Please register, then proceed to purchase the article.
Login via OpenAthens
Search for your institution's name below to login via Shibboleth.
Registered Users please login:
- Access your saved publications, articles and searches
- Manage your email alerts, orders and subscriptions
- Change your contact information, including your password
Please register to:
- Save publications, articles and searches
- Get email alerts
- Get all the benefits mentioned below!