Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition
Version of Record online: 18 NOV 2013
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 1, pages 40–47, January 2014
How to Cite
Splith, D., Müller, S., Schmidt, F., von Wenckstern, H., van Rensburg, J. J., Meyer, W. E. and Grundmann, M. (2014), Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition. Phys. Status Solidi A, 211: 40–47. doi: 10.1002/pssa.201330088
- Issue online: 21 JAN 2014
- Version of Record online: 18 NOV 2013
- Manuscript Accepted: 16 OCT 2013
- Manuscript Revised: 26 SEP 2013
- Manuscript Received: 30 JUN 2013
- EFRE SAB 100132251 Universität Leipzig
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