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Atomic layer deposition of ZrO2 for graphene-based multilayer structures: In situ and ex situ characterization of growth process

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Abstract

Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100-nm thick nickel film or on Cu-foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 °C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained. pssa201330106-gra-0001

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