Present address: Department of Physics and Earth Sciences, University of Parma, Viale delle Scienze 7/A, 43124 Parma, Italy.
On the nature and temperature dependence of the fundamental band gap of In2O3
Version of Record online: 24 SEP 2013
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 1, pages 54–58, January 2014
How to Cite
Irmscher, K., Naumann, M., Pietsch, M., Galazka, Z., Uecker, R., Schulz, T., Schewski, R., Albrecht, M. and Fornari, R. (2014), On the nature and temperature dependence of the fundamental band gap of In2O3. Phys. Status Solidi A, 211: 54–58. doi: 10.1002/pssa.201330184
- Issue online: 21 JAN 2014
- Version of Record online: 24 SEP 2013
- Manuscript Accepted: 27 AUG 2013
- Manuscript Revised: 26 AUG 2013
- Manuscript Received: 30 JUL 2013
- band gap;
- optical absorption
The onset of optical absorption in In2O3 at about 2.7 eV is investigated by transmission spectroscopy of single crystals grown from the melt. This absorption is not defect related but is due to the fundamental band gap of In2O3. The corresponding spectral dependence of the absorption coefficient is determined up to α = 2500 cm−1 at a photon energy hν = 3.05 eV at room temperature without indication of saturation. A detailed analysis of the hν dependence of α including low-temperature absorption data shows that the absorption process can be well approximated by indirect allowed transitions. It is suggested that the fundamental band gap of In2O3 is of indirect nature. The temperature dependence of the fundamental band gap is measured over a wide range from 9 to 1273 K and can be well fitted by a single-oscillator model. Compared to other semiconductors the reduction of the gap with increasing temperature is exceptionally strong in In2O3.