Influence of Ni and Au/Ni catalysts on GaN nanowire growth

Authors

  • Danna Zhao,

    1. Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian, P. R. China
    Search for more papers by this author
  • Hui Huang,

    Corresponding author
    1. Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian, P. R. China
    Search for more papers by this author
  • Haibo Wu,

    1. Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian, P. R. China
    Search for more papers by this author
  • Mingkun Ren,

    1. Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian, P. R. China
    Search for more papers by this author
  • Huichao Zhu,

    1. Department of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian, P. R. China
    Search for more papers by this author
  • Yan Liu,

    1. National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, Yanshan University, Hebei, P. R. China
    Search for more papers by this author
  • Baojuan Sun

    1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China
    Search for more papers by this author

Abstract

GaN nanowires (NWs) were grown on Ni- and Au/Ni-coated Si (100) substrate by chemical vapor deposition via reaction of metallic Ga and NH3. It was found that the Au/Ni layer tends to form liquid droplets with more uniform size distribution and regular spherical shape under annealing, which facilitates the growth of straight and long NWs. The effects of NH3/N2 ratio on NW growth are different for Ni and Au/Ni catalysts, due to the competition between the vapor–solid (VS) and vapor–liquid–solid (VLS) growth. The XRD analyses indicate that with decreasing NH3 flow rate, [0001] axial growth becomes dominant with the formation of NiGa4 catalyst.

Ancillary