Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

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Abstract

Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma-enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane (CH4), and ammonia (NH3) gas as precursors. The concentration of elements in the films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical composition was analyzed by Fourier transform infrared spectroscopy (FT-IR). The films contain a small amount of oxygen. IR results showed the presence of Si[BOND]C, Si[BOND]N, Si[BOND]H, C[BOND]H, C[BOND]N, N[BOND]H, and Si[BOND]O bonds. The current–voltage (IV) characteristics of samples before and after neutron irradiation were measured. The measured current increases after irradiation with neutrons.

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