Deep-ultraviolet AlGaN light-emitting diodes with variable quantum well and barrier widths



In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is proposed and numerically investigated using SimuLED software. By step-increasing the thickness of the quantum wells and step-decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV-LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.