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Keywords:

  • epitaxial growth;
  • magnetron sputtering;
  • silicon carbide;
  • thin films;
  • zirconium diboride

Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at a high rate ∼80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high-resolution electron microscopy.