Front- and rear-side photoluminescence: recombination, depth profiles of excess carriers and optical band gap of Cu(In,Ga)Se2 in a three-layer system
Article first published online: 31 JAN 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 5, pages 1128–1133, May 2014
How to Cite
Neumann, O., Brüggemann, R., Könne, N. and Bauer, G. H. (2014), Front- and rear-side photoluminescence: recombination, depth profiles of excess carriers and optical band gap of Cu(In,Ga)Se2 in a three-layer system. Phys. Status Solidi A, 211: 1128–1133. doi: 10.1002/pssa.201330351
- Issue published online: 15 MAY 2014
- Article first published online: 31 JAN 2014
- Manuscript Accepted: 20 DEC 2013
- Manuscript Revised: 19 DEC 2013
- Manuscript Received: 9 OCT 2013
- BMBF (contract no. 03SF 0359-B, GRACIS)
Options for accessing this content:
- If you have access to this content through a society membership, please first log in to your society website.
- If you would like institutional access to this content, please recommend the title to your librarian.
- Login via other institutional login options http://onlinelibrary.wiley.com/login-options.
- You can purchase online access to this Article for a 24-hour period (price varies by title)
- If you already have a Wiley Online Library or Wiley InterScience user account: login above and proceed to purchase the article.
- New Users: Please register, then proceed to purchase the article.
Login via OpenAthens
Search for your institution's name below to login via Shibboleth.
Registered Users please login:
- Access your saved publications, articles and searches
- Manage your email alerts, orders and subscriptions
- Change your contact information, including your password
Please register to:
- Save publications, articles and searches
- Get email alerts
- Get all the benefits mentioned below!