Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2 environment

Authors

  • Zhen Deng,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Yang Jiang,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Peng Zuo,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Yutao Fang,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Ziguang Ma,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Haiqiang Jia,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Junming Zhou,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
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  • Hong Chen

    Corresponding author
    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Zhongguancun, Beijing, P.R. China
    • Corresponding author: e-mail hchen@iphy.ac.cn, Phone: +86 10 82648149, Fax: +86 10 82649296

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Abstract

A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p-GaN structure with heavily Mg-doping grown at low temperature in full N2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm−2 due to the higher hole concentration as compared to the normal p-GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.

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