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Keywords:

  • efficiency droop;
  • GaN light emitting diodes;
  • low temperature;
  • p-GaN layer

A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p-GaN structure with heavily Mg-doping grown at low temperature in full N2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm−2 due to the higher hole concentration as compared to the normal p-GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.