Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2 environment
Version of Record online: 19 FEB 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 5, pages 1175–1178, May 2014
How to Cite
Deng, Z., Jiang, Y., Zuo, P., Fang, Y., Ma, Z., Jia, H., Zhou, J. and Chen, H. (2014), Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2 environment. Phys. Status Solidi A, 211: 1175–1178. doi: 10.1002/pssa.201330490
- Issue online: 15 MAY 2014
- Version of Record online: 19 FEB 2014
- Manuscript Accepted: 24 JAN 2014
- Manuscript Revised: 20 JAN 2014
- Manuscript Received: 21 NOV 2013
- National High Technology Research and Development Program of China. Grant Number: 2011AA03A112 and 2011AA03A106
- National Nature Science Foundation. Grant Number: 11204360 and 61210014
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