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Keywords:

  • Ga2O3;
  • light-emitting diodes;
  • silver;
  • transparent conductive electrodes

We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550 °C for 1 min showed ohmic-like current–voltage characteristics including specific contact resistances of 3.06 × 10−2 and 7.34 × 10−2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs.