Resistive switching characteristics of indium-tin-oxide thin film devices
Article first published online: 6 MAR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 5, pages 1194–1199, May 2014
How to Cite
Khiat, A., Salaoru, I. and Prodromakis, T. (2014), Resistive switching characteristics of indium-tin-oxide thin film devices. Phys. Status Solidi A, 211: 1194–1199. doi: 10.1002/pssa.201330646
- Issue published online: 15 MAY 2014
- Article first published online: 6 MAR 2014
- Manuscript Accepted: 12 FEB 2014
- Manuscript Revised: 31 JAN 2014
- Manuscript Received: 11 DEC 2013
- CHIST-ERA ERA-Net
- EPSRC. Grant Numbers: EP/J00801X/1, EP/K017829/1
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