Annealing and etching treatments on ZnO:Al films deposited by middle frequency sputtering at room temperature
Version of Record online: 14 APR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 7, pages 1589–1595, July 2014
How to Cite
Zhu, H., Mai, Y., Lai, B., Wan, M., Huang, Y. and Zhang, L. (2014), Annealing and etching treatments on ZnO:Al films deposited by middle frequency sputtering at room temperature. Phys. Status Solidi A, 211: 1589–1595. doi: 10.1002/pssa.201330653
- Issue online: 9 JUL 2014
- Version of Record online: 14 APR 2014
- Manuscript Revised: 17 MAR 2014
- Manuscript Accepted: 17 MAR 2014
- Manuscript Received: 16 DEC 2013
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