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One decade of fully transparent oxide thin-fi lm transistors: fabrication, performance and stability

  1. Top of page
  2. One decade of fully transparent oxide thin-fi lm transistors: fabrication, performance and stability
  3. Controlled manipulation of single atoms and small molecules using the scanning tunnelling microscope
  4. Terahertz-induced exciton signatures in semiconductors

Heiko Frenzel, Alexander Lajn, and Marius Grundmann

Fully transparent oxide thin-film transistors celebrate their 10th anniversary. Since the beginnings, using crystalline channel layers, there have been manifold improvements in terms of device performance and stability under stress. Today, mostly lowtemperature grown amorphous channel layers are used. However, dielectrics are still fabricated by sophisticated techniques to suppress leakage currents. Metal-semiconductor field-effect transistors based on transparent rectifying contacts as gate electrode represent a promising alternative technology for transparent electronics.

Phys. Status Solidi RRL (2013) DOI 10.1002∕pssr.201307259

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Controlled manipulation of single atoms and small molecules using the scanning tunnelling microscope

  1. Top of page
  2. One decade of fully transparent oxide thin-fi lm transistors: fabrication, performance and stability
  3. Controlled manipulation of single atoms and small molecules using the scanning tunnelling microscope
  4. Terahertz-induced exciton signatures in semiconductors

Karina Morgenstern, Nicolas Lorente, and Karl-Heinz Rieder

This article reviews manipulation of single molecules by scanning tunnelling microscopes, in particular vertical manipulation, lateral manipulation, and inelastic electron tunnelling manipulation. For a better understanding of these processes, the authors shortly review imaging by scanning tunnelling microscopy - as a prerequisite to detect the manipulated species and to verify the result of the manipulation - as well as scanning tunnelling spectroscopy and inelastic electron tunnelling spectroscopy which are used to chemically identify the molecules before and after the manipulation that employs the tunnelling current.

Phys. Status Solidi B (2013) DOI 10.1002∕pssb.201248392

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Terahertz-induced exciton signatures in semiconductors

  1. Top of page
  2. One decade of fully transparent oxide thin-fi lm transistors: fabrication, performance and stability
  3. Controlled manipulation of single atoms and small molecules using the scanning tunnelling microscope
  4. Terahertz-induced exciton signatures in semiconductors

C. N. Böttge, S. W. Koch, L. Schneebeli, B. Breddermann, A. C. Klettke, M. Kira, B. Ewers, N. S. Köster, and S. Chatterjee

This article discusses recent studies involving time-resolved optical and terahertz (THz) fields in the linear and nonlinear regime. An overview of the microscopic modeling scheme is presented and applied to analyze a variety of experimental results. The examples include coherent excitons in weak and strong THz fields, Rabi splitting and ionization of intra-excitonic transitions, THz studies in semiconductor microcavities, and the THz manipulation of excitonic transitions.

Phys. Status Solidi B (2013) DOI 10.1002∕pssb.201200704

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