Recent and forthcoming publications in pss


Silicon nanowires – a versatile technology platform

Thomas Mikolajick, André Heinzig, Jens Trom-mer, Sebastian Pregl, Matthias Grube, Gianaurelio Cuniberti, and Walter M. Weber

Based on their inherent small diameter, silicon nanowires offer unique properties that enable electron devices, sensors as well as solar cells and lithium batteries with the potential to significantly outperform their thin film or bulk counterparts. This article gives an overview of important device applications of silicon nanowires. Starting with nanowire fabrication, the different device concepts are introduced and their most important features reviewed. Spe-cial focus is put on different reconfigurable transistor concepts recently described in literature.

Phys. Status Solidi RRL (2013) DOI 10.1002∕pssr.201307247.

pssa201370059-gra-0001

Inorganic nanotubes and fullerene-like nanoparticles: synthesis, mechanical properties and applications

R. Tenne, R. Rosentsveig, and A. Zak

In this article the synthesis of inorganic nanotubes (INT) and to a lesser extent, inorganic fullerene-like nanoparticles (IF) of WS2, which have been recently scaled-up, is discussed in some detail. Subsequently the mechanical properties of IF/INT are summarized, in reference to their remarkable possibility to reinforce polymer matrices and serve as superior solid lubricants. The effect of adding minute amounts of such nanoparticles to various polymer matrices is reviewed with reference to thermo-plastic and thermosetting polymers. Possible different applica-tions of such nanocomposites are also briefly discussed.

Phys. Status Solidi A (2013) DOI 10.1002∕pssa.201329309.

pssa201370059-gra-0002

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Adisak Boonchun and Walter R. L. Lambrecht

While atomic nitrogen on the oxygen site in ZnO has too deep a level for p-type doping, a nitrogen molecule (N2) sitting on the Zn site is shown by means of first-principles calculations to have a shallow delocalized defect state suitable for p-type doping. The hyperfine structure and g-factor of the pro-posed N2 on Zn model are consistent with a previously observed Electron Paramagnetic Resonance center in ZnO. The identification of the shallow level with N2 on Zn, results in several new recommendations for achieving p-type doping: (i) work in Zn-poor, O-rich conditions, (ii) use N2 rather than atomic or excited or other N species such as NO, NH3 to incorporate nitrogen, (iii) as already established experimentally, use the Zn-polar surface.

Phys. Status Solidi B (2013) DOI 10.1002∕pssb.201300010.

pssa201370059-gra-0003

Ancillary