The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED
Article first published online: 22 APR 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 7, pages 1605–1609, July 2014
How to Cite
Chu, X. B., Guan, M., Niu, L. T., Zhang, Y., Li, Y. Y., Liu, X. F. and Zeng, Y. P. (2014), The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED. Phys. Status Solidi A, 211: 1605–1609. doi: 10.1002/pssa.201431090
- Issue published online: 9 JUL 2014
- Article first published online: 22 APR 2014
- Manuscript Revised: 27 MAR 2014
- Manuscript Accepted: 27 MAR 2014
- Manuscript Received: 19 FEB 2014
- National Natural Science Foundation of China (NNSFC). Grant Numbers: 61274049, 61204012, 61274007
- Beijing Natural Science Foundation. Grant Numbers: 4132070, 4142053
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