Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
Article first published online: 28 MAY 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 9, pages 2166–2171, September 2014
How to Cite
Jang, W., Jeon, H., Kang, C., Song, H., Park, J., Kim, H., Seo, H., Leskela, M. and Jeon, H. (2014), Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition. Phys. Status Solidi A, 211: 2166–2171. doi: 10.1002/pssa.201431162
- Issue published online: 8 SEP 2014
- Article first published online: 28 MAY 2014
- Manuscript Accepted: 8 MAY 2014
- Manuscript Revised: 7 MAY 2014
- Manuscript Received: 12 MAR 2014
- MEST. Grant Number: 2012K1A3A1A26034855
- Academy of Finland. Grant Numbers: 265080, 251220
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