Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents
Version of Record online: 4 JUN 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 211, Issue 9, pages 2189–2194, September 2014
How to Cite
Jeon, H., Park, J., Jang, W., Kim, H., Kang, C., Song, H., Kim, H., Seo, H. and Jeon, H. (2014), Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents. Phys. Status Solidi A, 211: 2189–2194. doi: 10.1002/pssa.201431260
- Issue online: 8 SEP 2014
- Version of Record online: 4 JUN 2014
- Manuscript Accepted: 13 MAY 2014
- Manuscript Revised: 11 MAY 2014
- Manuscript Received: 9 APR 2014
- Korean Government (MEST). Grant Number: (No. 2011-0015436)
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