Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)

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Abstract

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A promising wide bandgap alternative that has been overlooked up until now is gallium oxide (Ga2O3). Thanks to material properties related to its bandgap (4.7–4.9 eV) that is significantly larger than that of SiC and GaN, this oxide promises to enable the production of devices with higher breakdown voltages and higher efficiencies than those stemming from its wide bandgap rivals. What's more, Ga2O3 power devices could be manufactured at low cost in high volume, because it is possible to produce single-crystal native substrates from a melt using the same method employed for manufacturing sapphire substrates. Metal-semiconductor field-effect transistors (MESFETs) and Schottky barrier diodes (SBDs) fabricated on single-crystal Ga2O3 substrates have already demonstrated reasonably good device characteristics for considering high-performance power electronics application in the near future. For further details see the Invited Article by Higashiwaki et al. (pp. 21–26). The cover page shows schematic illustrations of the Ga2O3 MESFETs and SBDs, and a photograph of a 2’’-diameter Ga2O3 wafer, on a micrograph of a ring-pattern MESFET.

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