Short Note

Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes

  1. K. Natarajan1,
  2. K. Ramkumar2,
  3. M. Satyam2

Article first published online: 15 FEB 2006

DOI: 10.1002/pssa.2211150263

Issue

physica status solidi (a)

physica status solidi (a)

Volume 115, Issue 2, pages K265–K268, 16 October 1989

Additional Information

How to Cite

Natarajan, K., Ramkumar, K. and Satyam, M. (1989), Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes. phys. stat. sol. (a), 115: K265–K268. doi: 10.1002/pssa.2211150263

Author Information

  1. 1

    Silicon Devices Division, Bharat Electronic Ltd., Banglore†

  2. 2

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore‡

  1. Bangalore 560 013, India.

  2. Bangalore 560 012, India.

Publication History

  1. Issue published online: 15 FEB 2006
  2. Article first published online: 15 FEB 2006
  3. Manuscript Received: 6 JUL 1989

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (214K)

First page of article

First page of Reverse characteristics of phosphorous passivated polysilicon p‐n junction diodes
Get PDF (214K)