Kharagpur 721302, India.
Electron beam activated plasma chemical vapour deposition of polycrystalline diamond films
Article first published online: 17 FEB 2006
Copyright © 1995 WILEY-VCH Verlag GmbH & Co. KGaA
physica status solidi (a)
Volume 151, Issue 1, pages 107–112, 16 September 1995
How to Cite
Nayak, A. and Banerjee, H. D. (1995), Electron beam activated plasma chemical vapour deposition of polycrystalline diamond films. phys. stat. sol. (a), 151: 107–112. doi: 10.1002/pssa.2211510112
- Issue published online: 17 FEB 2006
- Article first published online: 17 FEB 2006
- Manuscript Revised: 29 MAY 1995
- Manuscript Received: 23 MAR 1995
- Council of Scientific and Industrial Research (CSIR), New Delhi
Polycrystalline diamond films (1 to 10 μm grain diameter) are successfully deposited by electron beam activated chemical vapour deposition technique using glow discharge/plasma generated electron beam from 3 to 4 vol% CH3COCH3 in H2. The growth rates of film depositions are 4 μm/h at 533 Pa pressure and at relatively low substrate (silicon) temperatures (550 to 600°C). Crystallinity, morphology, and quality of the diamond films are studied by X-ray diffraction, scanning electron microscopy, and laser Raman spectroscopy techniques, respectively. The use of electron bombardment in the presence of H and OH plays a dominant role for etching the non-diamond component in the film and facilitating the growth of a stable phase of tetrahedrally coordinated carbon (diamond) films at lower temperatures.