physica status solidi (a)

Cover image for physica status solidi (a)

16 August 1993

Volume 138, Issue 2

Pages fmi–fmi, 361–721

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Articles
    1. Masthead (page fmi)

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380201

  2. Articles

    1. Top of page
    2. Masthead
    3. Articles
    1. Density functional calculations for stacking faults and grain boundaries in silicon (pages 361–367)

      H. Teichler and S. Sanguinetti

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380202

    2. Density functional calculations of the structure and properties of impurities and dislocations in semiconductors (pages 369–381)

      R. Jones, A. Umerski, P. Sitch, M. I. Heggie and S. Öberg

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380203

    3. Ab initio total energy calculations of impurity pinning in silicon (pages 383–387)

      M. I. Heggie, R. Jones and A. Umerski

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380204

    4. Spontaneous nucleation of misfit dislocations in strained epitaxial layers (pages 425–430)

      D. D. Perovic and D. C. Houghton

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380209

    5. Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures (pages 431–435)

      J. Wang, J. W. Steeds and D. I. Westwood

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380210

    6. Extended defects in II-VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations (pages 437–443)

      G. Patriarche, J. P. Rivière, J. Castaing, A. Tromson Carli, R. Triboulet and Y. Marfaing

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380211

    7. Point defect interaction with α- and β-dislocations in InP (pages 445–450)

      A. Zozime, I. Hanke and W. Schröter

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380212

    8. Interactions of oxygen, carbon, and extended defects in silicon (pages 451–464)

      S. Pizzini, S. Binetti, M. Acciarri and S. Acerboni

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380213

    9. Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials (pages 465–471)

      B. Pichaud, G. Mariani, W. J. Taylor and W.-S. Yang

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380214

    10. Cobalt- and nickel-disilicide formation at twin boundaries in silicon (pages 473–482)

      J. Chung and H. J. Möller

      Article first published online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380215

    11. Electron microscopy and positron investigations of plastically deformed GaAs (pages 489–495)

      H. S. Leipner, R. Krause-Rehberg, A. Kupsch, T. Drost and A. Polity

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380217

    12. In situ transmission electron microscopy of semiconductors (pages 505–515)

      J. Heydenreich, D. Baither, D. Hoehl and U. Messerschmidt

      Article first published online: 15 APR 2008 | DOI: 10.1002/pssa.2211380219

    13. Ultrasonic treatment of GaP and GaAs (pages 517–521)

      D. Klimm, B. Tippelt, P. Paufler and P. Haasen

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380220

    14. Barriers for the kink motion on dislocations in Si (pages 557–571)

      B. Ya. Farber, Yu. L. Iunin, V. I. Nikitenko, V. I. Orlov, H. Alexander, H. Gottschalk and P. Specht

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380224

    15. Dynamics of dislocations in II-VI compounds under electronic excitation. A TEM “in situ” study (pages 583–589)

      A. Faress, C. Levade and G. Vanderschaeve

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380226

    16. Dislocation dynamics in Ge single crystals under conditions of periodic two-level intermittent loading (pages 601–606)

      Yu. L. Iunin, V. I. Nikitenko and V. I. Orlov

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380228

    17. EDSR Investigation of n-type silicon deformed under high stress (pages 607–615)

      M. Wattenbach and H. Alexander

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380229

    18. 1D conduction and photoconduction measurements at dislocations in Ge (pages 617–624)

      J. Hess and R. Labusch

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380230

    19. Local investigation of grain boundaries by grain-boundary EBIC (pages 639–648)

      J. Palm and H. Alexander

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380233

    20. Capacitance transient study of deformation-induced defects in n-type GaAs (pages 651–656)

      T. Sekiguchi, K. Sumino and H. Okushi

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380235

    21. Luminescence associated with the presence of dislocations in silicon (pages 665–672)

      E. C. Lightowlers and V. Higgs

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380237

    22. Optical properties of dislocations in silicon crystals (pages 681–686)

      Yu. G. Shreter, Yu. T. Rebane and A. R. Peaker

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380239

    23. EBIC investigations of dislocations and their interactions with impurities in silicon (pages 695–704)

      T. S. Fell, P. R. Wilshaw and M. D. De Coteau

      Article first published online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380241

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