physica status solidi (a)

Cover image for physica status solidi (a)

16 August 1993

Volume 138, Issue 2

Pages fmi–fmi, 361–721

Currently known as: physica status solidi (a)

  1. Masthead

    1. Top of page
    2. Masthead
    3. Articles
    1. Masthead (page fmi)

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380201

  2. Articles

    1. Top of page
    2. Masthead
    3. Articles
    1. Ab initio total energy calculations of impurity pinning in silicon (pages 383–387)

      M. I. Heggie, R. Jones and A. Umerski

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380204

    2. Extended defects in II-VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations (pages 437–443)

      G. Patriarche, J. P. Rivière, J. Castaing, A. Tromson Carli, R. Triboulet and Y. Marfaing

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380211

    3. Point defect interaction with α- and β-dislocations in InP (pages 445–450)

      A. Zozime, I. Hanke and W. Schröter

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380212

    4. Interactions of oxygen, carbon, and extended defects in silicon (pages 451–464)

      S. Pizzini, S. Binetti, M. Acciarri and S. Acerboni

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380213

    5. Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials (pages 465–471)

      B. Pichaud, G. Mariani, W. J. Taylor and W.-S. Yang

      Version of Record online: 16 FEB 2006 | DOI: 10.1002/pssa.2211380214

    6. Electron microscopy and positron investigations of plastically deformed GaAs (pages 489–495)

      H. S. Leipner, R. Krause-Rehberg, A. Kupsch, T. Drost and A. Polity

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380217

    7. In situ transmission electron microscopy of semiconductors (pages 505–515)

      J. Heydenreich, D. Baither, D. Hoehl and U. Messerschmidt

      Version of Record online: 15 APR 2008 | DOI: 10.1002/pssa.2211380219

    8. Ultrasonic treatment of GaP and GaAs (pages 517–521)

      D. Klimm, B. Tippelt, P. Paufler and P. Haasen

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380220

    9. Barriers for the kink motion on dislocations in Si (pages 557–571)

      B. Ya. Farber, Yu. L. Iunin, V. I. Nikitenko, V. I. Orlov, H. Alexander, H. Gottschalk and P. Specht

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380224

    10. EDSR Investigation of n-type silicon deformed under high stress (pages 607–615)

      M. Wattenbach and H. Alexander

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380229

    11. Capacitance transient study of deformation-induced defects in n-type GaAs (pages 651–656)

      T. Sekiguchi, K. Sumino and H. Okushi

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380235

    12. Optical properties of dislocations in silicon crystals (pages 681–686)

      Yu. G. Shreter, Yu. T. Rebane and A. R. Peaker

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380239

    13. EBIC investigations of dislocations and their interactions with impurities in silicon (pages 695–704)

      T. S. Fell, P. R. Wilshaw and M. D. De Coteau

      Version of Record online: 15 FEB 2006 | DOI: 10.1002/pssa.2211380241

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