physica status solidi (a)

Cover image for Vol. 195 Issue 1

January 2003

Volume 195, Issue 1

Pages 3–285

Currently known as: physica status solidi (a)

    1. Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy (pages 18–25)

      E. Bustarret, D. Vobornik, A. Roulot, T. Chassagne, G. Ferro, Y. Monteil, E. Martinez-Guerrero, H. Mariette, B. Daudin and Le Si Dang

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306261

    2. Cathodoluminescence and micro-Raman characterisation of GaN/AlN QDs grown on Si (111) (pages 26–31)

      O. Martinez, M. Mazzoni, F. Rossi, N. Armani, G. Salviati, P. P. Lottici and D. Bersani

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306288

    3. Lateral modulations in InAlAs/InP and InGaAs/InP systems (pages 32–37)

      F. Peiró, J. C. Ferrer, A. Cornet, M. Calamiotou and A. Georgakilas

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306293

    4. Optical and morphological characteristics of LP MOVPE grown lattice matched GaInP/GaAs heterostructures (pages 50–55)

      S. Scardova, C. Pelosi, G. Attolini, B. Lo, O. Martinez, E. Martín, A. M. Ardila and J. Jiménez

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306285

    5. Dynamical behaviour of the δ-doped Au/GaAs Schottky barrier (pages 61–66)

      P. Hubík, L. Dózsa, P. Lipavský, J. Oswald, J. J. Mareš and J. Krištofik

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306272

    6. Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs (pages 81–86)

      M. Dammann, A. Leuther, F. Benkhelifa, T. Feltgen and W. Jantz

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306303

    7. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures (pages 93–100)

      Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, T. Palacios, F. Calle and M. Leroux

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306305

    8. Effects of γ-irradiation on AlGaN/GaN-based HEMTs (pages 101–105)

      S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyuk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, A. E. Rengevich, A. Yu. Avksentyev, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh and L. F. Eastman

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306264

    9. Radiationless recombination mechanisms in GaN surface layers determined from photoluminescence (pages 106–111)

      V. N. Bessolov, V. V. Evstropov, A. L. Fradkov, V. A. Fedirko, M. E. Kompan, E. V. Konenkova and Yu. V. Zhilyaev

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306279

    10. Study of absorption spectra of Er3+ ions in GaN crystals (pages 112–115)

      V. V. Krivolapchuk, M. M. Mezdrogina, S. D. Raevskii, A. P. Skvortsov, Sh. A. Yusupova and Yu. V. Zhilyaev

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306301

    11. Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers (pages 116–121)

      F. M. Morales, S. I. Molina, D. Araújo, V. Cimalla, J. Pezoldt, L. Barbadillo, M. J. Hernández and J. Piqueras

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306278

    12. Bulk gallium nitride: preparation and study of properties (pages 122–126)

      Yu. V. Zhilyaev, A. V. Nasonov, S. D. Raevski, S. N. Rodin, M. P. Shcheglov and V. Yu. Davydov

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306284

    13. Charge carrier parameters in the conductive channels of HEMTs (pages 127–132)

      G. Tomaka, E. M. Sheregii, T. Kąkol, W. Strupiński, A. Jasik and R. Jakieła

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306273

    14. Study of He+-implant isolation of InP/InGaAs HBT structures using TLM (pages 133–136)

      S. C. Subramaniam and A. A. Rezazadeh

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306296

    15. Mechanisms of semiconductor nanostructure formation (pages 151–158)

      R. S. Goldman, B. Shin and B. Lita

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306280

    16. Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers (pages 159–164)

      M. Bettiati, F. Laruelle, M. Pommiès, G. Hallais, J. Jiménez, M. Avella and E. V. K. Rao

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306297

    17. Convertibility of conductivity type in reactively sputtered ZnO thin films (pages 165–170)

      S. Tüzemen, Seydi Doğan, Aytunç Ateş, M. Yįldįrįm, Gang Xiong, John Wilkinson and R. T. Williams

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306290

    18. The path to ZnO devices: donor and acceptor dynamics (pages 171–177)

      D. C. Look, R. L. Jones, J. R. Sizelove, N. Y. Garces, N. C. Giles and L. E. Halliburton

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306274

    19. Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures (pages 178–182)

      U. Zeimer, J. Grenzer, S. Grigorian, J. Fricke, S. Gramlich, F. Bugge, U. Pietsch, M. Weyers and G. Tränkle

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306286

    20. Influence of pumping and inherent laser light on properties and degradation of ZnMgSSe/ZnSe quantum well heterostructures (pages 188–193)

      E. V. Lutsenko, G. P. Yablonskii, V. N. Pavlovskii, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, K. Heime, R. H. Jansen, T. Walther, B. Schineller and M. Heuken

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306267

    21. Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction (pages 194–198)

      V. A. Berezovets, M. P. Mikhailova, K. D. Moiseev, R. V. Parfeniev, Yu. P. Yakovlev and V. I. Nizhankovskii

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306295

    22. Formation of nanostructure on surface of SiC by laser radiation (pages 199–203)

      A. Medvid, B. Berzina, L. Trinkler, L. Fedorenko, P. Lytvyn, N. Yusupov, T. Yamaguchi, L. Sirghi and M. Aoyama

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306281

    23. InAs quantum dots in multilayer GaAs-based heterostructures (pages 204–208)

      E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev, V. G. Mokerov, Yu. V. Fedorov, Zs. J. Horvath and R. M. Imamov

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306298

    24. Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells (pages 209–213)

      T. V. Torchynska, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy and R. Pena Sierra

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306302

    25. Room temperature ferromagnetism in GaMnN and GaMnP (pages 222–227)

      S. J. Pearton, M. E. Overberg, G. T. Thaler, C. R. Abernathy, J. Kim, F. Ren, N. Theodoropoulou, A. F. Hebard and Yun Daniel Park

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306283

    26. Microcircuit tailoring in ferromagnetic semiconductor (Ga,Mn)As (pages 228–231)

      T. Figielski, T. Wosinski, A. Morawski, O. Pelya, J. Sadowski, A. L. Toth and J. Jagielski

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306287

    27. Projective techniques for the growth of compound semiconductor nanostructures (pages 232–237)

      T. Schallenberg, C. Schumacher and L. W. Molenkamp

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306291

    28. Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques (pages 238–242)

      K. Jarašiūnas, E. Gaubas, R. Aleksiejūnas, M. Sūdžius, V. Gudelis, T. Malinauskas, P. Prete, A. M. Mancini and N. Lovergine

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306294

    29. Evaluation of MESFET structures from temperature-dependent Hall effect measurements (pages 243–247)

      P. Terziyska, C. Blanc, J. Pernot, H. Peyre, S. Contreras, G. Bastide, J. L. Robert, J. Camassel, E. Morvan, C. Dua and C. C. Brylinski

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306276

    30. Determining MnxCdyHg1–xyTe and ZnxCdyHg1–xyTe material parametersby magnetophonon spectroscopy (pages 255–259)

      J. Cebulski, T. Kąkol, J. Polit, E. M. Sheregii, D. Płoch and I. M. Rarenko

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306268

    31. Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy (pages 260–264)

      Soohaeng Cho, Jongseok Kim, A. Sanz-Hervás, A. Majerfeld, G. Patriarche and B. W. Kim

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306269

    32. Direct measurement of twist mosaic in epitaxial GaN (pages 265–270)

      T. A. Lafford, P. A. Ryan, D. E. Joyce, M. S. Goorsky and B. K. Tanner

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306270

    33. High spatial resolution Makyoh topography using shifted grid illumination (pages 271–276)

      István E. Lukács, Ferenc Riesz and Zsolt J. Laczik

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306271

    34. Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry (pages 277–281)

      E. R. Shaaban, T. Lohner, P. Petrik, N. Q. Khánh, M. Fried, O. Polgár and J. Gyulai

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306277

    35. Cathodoluminescence study of GaN-infilled opal nanocomposites (pages 282–285)

      A. Cremades, M. Sánchez, J. Piqueras, V. G. Golubev, N. F. Kartenko and D. A. Kurdyukov

      Version of Record online: 14 JAN 2003 | DOI: 10.1002/pssa.200306299

SEARCH

SEARCH BY CITATION