physica status solidi (a)

Cover image for Vol. 200 Issue 1

November 2003

Volume 200, Issue 1

Pages R1–R7, 3–208

Currently known as: physica status solidi (a)

    1. Yb3+-doped Y3Al5O12 ceramics – A new solid-state laser material (pages R5–R7)

      K. Takaichi, H. Yagi, J. Lu, A. Shirakawa, K. Ueda, T. Yanagitani and A. A. Kaminskii

      Version of Record online: 14 OCT 2003 | DOI: 10.1002/pssa.200309016

    2. Ultraviolet InAlGaN multiple-quantum-well laser diodes (page 3)

      Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M. Johnson

      Version of Record online: 14 NOV 2003 | DOI: 10.1002/pssa.200390016

    3. Bulk GaN crystals grown at high pressure as substrates for blue-laser technology (pages 9–12)

      R. Czernetzki, M. Leszczynski, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski, M. Krysko, M. Sarzynski, P. Wisniewski, G. Nowak, A. Libura, S. Grzanka, T. Suski, L. Dmowski, E. Litwin-Staszewska, M. Bockowski and S. Porowski

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303293

    4. Fast growth of high quality GaN (pages 13–17)

      D. Gogova, H. Larsson, R. Yakimova, Z. Zolnai, I. Ivanov and B. Monemar

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303342

    5. Characteristics of semi-insulating, Fe-doped GaN substrates (pages 18–21)

      Robert P. Vaudo, Xueping Xu, Allan Salant, Joseph Malcarne and George R. Brandes

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303273

    6. AlN substrates: fabrication via vapor phase growth and characterization (pages 22–25)

      Yu. Melnik, V. Soukhoveev, V. Ivantsov, V. Sizov, A. Pechnikov, K. Tsvetkov, O. Kovalenkov, V. Dmitriev, A. Nikolaev, N. Kuznetsov, E. Silveira and J. Freitas Jr.

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303522

    7. GaN-based epitaxy on silicon: stress measurements (pages 26–35)

      A. Krost, A. Dadgar, G. Strassburger and R. Clos

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303428

    8. High-quality quaternary AlInGaN epilayers on sapphire (pages 36–39)

      Yang Liu, Takashi Egawa, Hiroyasu Ishikawa and Takashi Jimbo

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303469

    9. High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80% (pages 40–43)

      Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto and Naoki Kobayashi

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303409

    10. Growth of GaN on porous SiC and GaN substrates (pages 44–47)

      C. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn and I. Adesida

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303542

    11. Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates (pages 48–51)

      W. H. Sun, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska and M. S. Shur

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303422

    12. Recent progress of nitride-based light emitting devices (pages 52–57)

      T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki and M. Kameshima

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303326

    13. Fabrication of LED based on III–V nitride and its applications (pages 58–61)

      Naoki Shibata, Toshiya Uemura, Hisao Yamaguchi and Takemasa Yasukawa

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303540

    14. Violet and UV light-emitting diodes grown on ZrB2 substrate (pages 67–70)

      S. Kamiyama, S. Takanami, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, M. Iwaya, H. Kinoshita, T. Matsuda, T. Yasuda, S. Otani, H. Amano and I. Akasaki

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303317

    15. Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development (pages 71–74)

      D. Lu, D. I. Florescu, D. S. Lee, V. Merai, A. Parekh, J. C. Ramer, S. P. Guo and E. Armour

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303282

    16. GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency (pages 75–78)

      Christoph M. Zellweger, Julien Dorsaz, Jean-François Carlin, Hans-Jörg Bühlmann, Ross P. Stanley and Marc Ilegems

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303276

    17. Heat generation and dissipation in GaN-based light emitting devices (pages 83–86)

      Stephan Figge, Tim Böttcher, Detlef Hommel, Christoph Zellweger and Marc Ilegems

      Version of Record online: 14 NOV 2003 | DOI: 10.1002/pssa.200303492

    18. High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface (pages 87–90)

      Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi and Shiro Sakai

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303253

    19. High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes (pages 91–94)

      Chin-Hsiang Chen, Shoou-Jinn Chang and Yan-Kuin Su

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303496

    20. Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40% (pages 95–98)

      Hiromitsu Kudo, Youichiro Ohuchi, Takahide Jyouichi, Takashi Tsunekawa, Hiroaki Okagawa, Kazuyuki Tadatomo, Yasuhide Sudo, Munehiro Kato and Tsunemasa Taguchi

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303513

    21. Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes (pages 99–101)

      A. Chitnis, V. Adivarahan, J. P. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin, M. Asif Khan, X. Hu, Q. Fareed, R. Gaska and M. S. Shur

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303420

    22. High efficiency AlGaInN-based light emitting diode in the 360–380 nm wavelength range (pages 102–105)

      Hisao Sato, Hong-Xing Wang, Daisuke Sato, Ryohei Takaki, Naoki Wada, Tetsuya Tanahashi, Kenji Yamashita, Shunsuke Kawano, Takashi Mizobuchi, Akihiko Dempo, Kenji Morioka, Masahiro Kimura, Suguru Nohda, Tomoya Sugahara and Shiro Sakai

      Version of Record online: 14 NOV 2003 | DOI: 10.1002/pssa.200303478

    23. 340–350 nm GaN-free UV-LEDs (pages 106–109)

      T. Nishida, T. Ban and N. Kobayashi

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303411

    24. Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN (pages 110–113)

      M. Iwaya, S. Takanami, A. Miyazaki, T. Kawashima, K. Iida, S. Kamiyama, H. Amano and I. Akasaki

      Version of Record online: 14 NOV 2003 | DOI: 10.1002/pssa.200303504

    25. Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure (pages 114–117)

      Daisuke Morita, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka, Katsuhiro Yasutomo, Kazuyuki Akaishi, Shin-ichi Nagahama and Takashi Mukai

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303395

    26. Ultraviolet InAlGaN multiple-quantum-well laser diodes (pages 118–121)

      Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M. Johnson

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303390

    27. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate (pages 122–125)

      Shu Goto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma, Koshi Tamamura, Toshihiro Hashizu and Masao Ikeda

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303325

    28. AlGaInN violet laser diodes grown on GaN substrates with low aspect ratio (pages 131–134)

      Shigetoshi Ito, Yukio Yamasaki, Susumu Omi, Kunihiro Takatani, Toshiyuki Kawakami, Tomoki Ohno, Masaya Ishida, Yoshihiro Ueta, Takayuki Yuasa and Mototaka Taneya

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303345

    29. Influence of the carrier density on the optical gain and refractive index change in InGaN laser structures (pages 135–138)

      M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell and V. Härle

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303263

    30. Defects in degraded GaN-based laser diodes (pages 139–142)

      Shigetaka Tomiya, Shu Goto, Motonobu Takeya and Masao Ikeda

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303322

    31. Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers (pages 143–146)

      U. T. Schwarz, E. Sturm , W. Wegscheider, V. Kümmler, A. Lell and V. Härle

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303340

    32. Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10–100 nm) (pages 147–150)

      Atsushi Motogaito, Hironobu Watanabe, Kazumasa Hiramatsu, Kazutoshi Fukui, Yutaka Hamamura and Kazuyuki Tadatomo

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303305

    33. High performance Schottky UV detectors (265–100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer (pages 151–154)

      H. Miyake, H. Yasukawa, Y. Kida, K. Ohta, Y. Shibata, A. Motogaito, K. Hiramatsu, Y. Ohuchi, K. Tadatomo, Y. Hamamura and K. Fukui

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303487

    34. High-voltage rf operation of AlGaN/GaN heterojunction FETs (pages 161–167)

      M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto and T. Nakayama

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303252

    35. Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications (pages 168–174)

      Narihiko Maeda, Takehiko Tawara, Tadashi Saitoh, Kotaro Tsubaki and Naoki Kobayashi

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303468

    36. High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE (pages 175–178)

      M. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler and D. M. Tennant

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303277

    37. Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate (pages 179–182)

      M. Marso, P. Javorka, Y. Dikme, H. Kalisch, J. Bernát, C. Schäfer, B. Schineller, A. v. d. Hart, M. Wolter, A. Fox, R. H. Jansen, M. Heuken, P. Kordoš and H. Lüth

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303457

    38. Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy (pages 183–186)

      F. Bertram, J. Christen, S. Heikman, S. Keller, S. P. DenBaars and U. K. Mishra

      Version of Record online: 14 NOV 2003 | DOI: 10.1002/pssa.200303460

    39. High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate (pages 187–190)

      Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa and Takashi Jimbo

      Version of Record online: 7 NOV 2003 | DOI: 10.1002/pssa.200303537

    40. Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications (pages 191–194)

      R. Kiefer, R. Quay, S. Müller, T. Feltgen, B. Raynor, J. Schleife, K. Köhler, H. Massler, S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla and G. Weimann

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303415

    41. Drain current DLTS of AlGaN/GaN HEMTs (pages 195–198)

      T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto and K. Maezawa

      Version of Record online: 15 OCT 2003 | DOI: 10.1002/pssa.200303464

    42. Triode-type basic display structure using Si-doped AlN field emitters (pages 199–201)

      Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto and Naoki Kobayashi

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303302

    43. MBE-growth, characterization and properties of InN and InGaN (pages 202–208)

      Y. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki and T. Miyajima

      Version of Record online: 29 SEP 2003 | DOI: 10.1002/pssa.200303327

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