physica status solidi (a)

Cover image for Vol. 201 Issue 12

September 2004

Volume 201, Issue 12

Pages R79–R82, 2603–2858

Currently known as: physica status solidi (a)

    1. Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes (pages R79–R82)

      Rohit Khanna, K. Ip, K. K. Allums, K. Baik, C. R. Abernathy, S. J. Pearton, Y. W. Heo, D. P. Norton, F. Ren, R. Dwivedi, T. N. Fogarty and R. Wilkins

      Version of Record online: 25 AUG 2004 | DOI: 10.1002/pssa.200409059

    2. José Roberto Leite (1942–2004) (pages 2609–2610)

      President Adalberto Fazzio, Chairman Sylvio Canuto, Klaus Lischka and Editor-in-Chief Martin Stutzmann

      Version of Record online: 16 SEP 2004 | DOI: 10.1002/pssa.200490020

    3. Effects of GaN substrates on InAlGaN quaternary UV LEDs (pages 2624–2627)

      Katsushi Akita, Takao Nakamura and Hideki Hirayama

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200404980

    4. III-N based short-wavelength LEDs, LUCO-LEDs, and lasers (pages 2628–2634)

      F. Sommer, T. Stephan, F. Vollrath, K. Köhler, M. Kunzer, S. Müller, P. Schlotter, W. Pletschen, U. Kaufmann and J. Wagner

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200404983

    5. Facet degradation of (Al,In)GaN laser diodes (pages 2635–2638)

      Thomas Schoedl, Ulrich T. Schwarz, Stephan Miller, Andreas Leber, Michael Furitsch, Alfred Lell and Volker Härle

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200404990

    6. Milliwatt Power 350 nm-band Quaternary InAlGaN UV-LEDs on GaN Substrates (pages 2639–2643)

      Hideki Hirayama, Katsushi Akita, Takashi Kyono and Takao Nakamura

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200404994

    7. High power blue LED development using different growth modes (pages 2644–2648)

      Dong S. Lee, Doru I. Florescu, Dong Lu, Jeff C. Ramer, Vinod Merai, Aniruddh Parekh, Michael J. Begarney and Eric A. Armour

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200404995

    8. Fabrication of AlInGaN-based blue-violet laser diode with low input power (pages 2649–2652)

      Joon Seop Kwak, T. Jang, K. K. Choi, Y. J. Sung, Y. H. Kim, S. Chae, S. N. Lee, K. H. Ha, O. H. Nam and Y. Park

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405001

    9. Novel photodetectors based on InGaN/GaN multiple quantum wells (pages 2658–2662)

      C. Rivera, J. L. Pau, F. B. Naranjo and E. Muñoz

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405019

    10. Influence of Electron Tunneling Barriers on the Performance of InGaN–GaN Ultraviolet Light-Emitting Diodes (pages 2663–2667)

      K. C. Kim, Y. C. Choi, D. H. Kim, T. G. Kim, S. H. Yoon, C. S. Sone and Y. J. Park

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405031

    11. InGaN violet laser diodes grown by Molecular Beam Epitaxy (pages 2668–2671)

      J. Heffernan, M. Kauer, S. E. Hooper, V. Bousquet and K. Johnson

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405034

    12. Current status of GaN-based multiple quantum well laser diodes (pages 2672–2674)

      H. Watanabe, T. Umezaki, J. Minoura, M. Ohashi, N. Arazoe, R. Nakamura, T. Hatano, T. Sonoyama, Y. Watanabe, M. Okawachi and S. Iwayama

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405041

    13. InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror (pages 2675–2678)

      J. Dorsaz, J.-F. Carlin, C. M. Zellweger, S. Gradecak and M. Ilegems

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405042

    14. Defect and stress control of AlGaN for fabrication of high performance UV light emitters (pages 2679–2685)

      H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, F. A. Ponce, S. Sahonta and D. Cherns

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405044

    15. Fabrication of metal–semiconductor–metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterostructures (pages 2686–2690)

      Dong-Wook Kim, Kyong-Seok Chea, Yong-Jo Park, In-Hwan Lee and Cheul-Ro Lee

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405048

    16. Effects of doping parameters on the CIE value of flexible white organic light emitting diodes (pages 2691–2694)

      Fuh-Shyang Juang, Yu-Sheng Tsai, Ming-Yein Lin, Chan-Yi Yang, David Lin, Wen-Tunn Wang and Chai-Yuan Shen

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405060

    17. GaPN–GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy (pages 2695–2698)

      S. Y. Moon, A. Utsumi, H. Yonezu, Y. Furukawa, T. Ikeda and A. Wakahara

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405070

    18. InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact (pages 2704–2707)

      K. Tamura, K. Nakahara, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada and S. Niki

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405090

    19. Aging characteristics of II–VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates (pages 2708–2711)

      Yuki Nakai, Ichirou Nomura, Yasushi Takashima, Akihiko Kikuchi and Katsumi Kishino

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405106

    20. Current status and future prospects of GaN-based LEDs and LDs (pages 2712–2716)

      T. Mukai, S. Nagahama, T. Kozaki, M. Sano, D. Morita, T. Yanamoto, M. Yamamoto, K. Akashi and S. Masui

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405113

    21. Characteristics of GaN-based laser diodes for post-DVD applications (pages 2717–2720)

      O. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae, W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, J. K. Son, H. Y. Ryu, Y. H. Kim and Y. Park

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405114

    22. Versatile ultraviolet light emitting diodes for sensor applications (pages 2721–2725)

      Yoon-Kyu Song, A. V. Nurmikko, Maria Gherasimova, Seong-Ran Jeon and Jung Han

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405122

    23. High brightness GaN-based light emitting diodes using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction (pages 2726–2729)

      Suk-Hun Lee, Hyo-Kun Son, Sung-Jae Kim, Hwan-Hee Jeong, Ja-Soon Jang, Jong-Jae Jung, Sang-Hern Lee, Tae Hoon Kim and Young Moon Yu

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405123

    24. Efficient white LED lighting and its application to medical fields (pages 2730–2735)

      T. Taguchi, Y. Uchida and K. Kobashi

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405101

    25. High brightness LEDs for general lighting applications Using the new ThinGaN™-Technology (pages 2736–2739)

      V. Haerle, B. Hahn, S. Kaiser, A. Weimar, S. Bader, F. Eberhard, A. Plössl and D. Eisert

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405119

    26. Influence of etching condition on surface morphology of AlN and GaN layers (pages 2755–2759)

      N. Kuwano, R. Tajima, S. Bohyama, H. Miyake, K. Hiramatsu and T. Shibata

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200404984

    27. Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates (pages 2760–2763)

      Nikolaus Gmeinwieser, Karl Engl, Ulrich T. Schwarz, Josef Zweck, Werner Wegscheider, Stephan Miller, Andreas Leber, Andreas Weimar, Alfred Lell and Volker Härle

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200404998

    28. Electroluminescence from deep level transitions in an AlGaN/GaN superlattice (pages 2764–2767)

      J. K. Son, T. Sakong, S. N. Lee, W. S. Lee, H. Paek, H. Y. Ryu, K. Choi, S. Chae, O. Nam and Y. Park

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405000

    29. Strong blue emission from Er3+ doped in AlxGa1–xN (pages 2768–2772)

      A. Wakahara, Y. Nakanishi, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, T. Kamiya and Y.-T. Kim

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405006

    30. Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN (pages 2773–2776)

      A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann and M. Schubert

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405013

    31. Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering (pages 2777–2781)

      Ik Jae Lee, Jae-Yong Kim, Tae-Bong Hur and Hyung-Kook Kim

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405025

    32. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN (pages 2782–2785)

      Mio Suzuki, T. Sato, T. Suemasu and F. Hasegawa

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405057

    33. High-power GaN light-emitting diodes with patterned copper substrates by electroplating (pages 2786–2790)

      R. H. Horng, C. E. Lee, S. C. Hsu, S. H. Huang, C. C. Wu, C. Y. Kung and D. S. Wuu

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405091

    34. Properties of various ion-implanted sapphire substrates for GaN epilayers (pages 2791–2794)

      J. Jhin, J. Lee, D. Byun, J. S. Lee, J. H. Lee, C. Kim, H. Lee, Y. Moon and E. Koh

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405094

    35. Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics (pages 2795–2798)

      Suk-Hun Lee, Hyun-Hwi Lee, Jong-Jae Jung, Young-Bu Moon, Tae Hoon Kim, Jong Hyeob Baek and Young Moon Yu

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405104

    36. Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers (pages 2799–2802)

      H. S. Cheong, T. V. Cuong, H. G. Kim, J. Y. Park, C. S. Kim, C.-H. Hong, J. H. Baek, S. H. Lee, T. H. Kim and Y. M. Yu

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405117

    37. Growth and annealing conditions of high Al-content p-type AlGaN for deep-UV LEDs (pages 2803–2807)

      Toshiyuki Obata, Hideki Hirayama, Yoshinobu Aoyagi and Koji Ishibashi

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405120

    38. Towards understanding the emission efficiency of nitride quantum wells (pages 2808–2813)

      A. Hangleiter, D. Fuhrmann, M. Grewe, F. Hitzel, G. Klewer, S. Lahmann, C. Netzel, N. Riedel and U. Rossow

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405051

    39. Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices (pages 2814–2817)

      Tohru Honda, Miwako Akiyama, Shinichi Egawa, Yohta Aoki, Naoyuki Obinata and Hideo Kawanishi

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405054

    40. Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading (pages 2818–2822)

      S.-Y. Kwon, M.-H. Cho, P. Moon, H. J. Kim, H. Na, H.-C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y.-H. Cho and E. Yoon

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405076

    41. Low resistance and highly reflective Cu–Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (pages 2823–2826)

      Dong-Seok Leem, June-O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park and Tae-Yeon Seong

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405003

    42. High transparency low resistance oxidized Ni/Au–ZnO contacts to p-GaN for high performance LED applications (pages 2827–2830)

      Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu and Henry P. Lee

      Version of Record online: 2 SEP 2004 | DOI: 10.1002/pssa.200405095

    43. Ohmic contacts for high power LEDs (pages 2831–2836)

      Ho Won Jang, Jong Kyu Kim, Soo Young Kim, Hak Ki Yu and Jong-Lam Lee

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405111

    44. Growth of phosphorus doped ZnO thin films by pulsed laser deposition (pages 2837–2840)

      Veeramuthu Vaithianathan, Byung-Teak Lee and Sang Sub Kim

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405030

    45. Pulse laser assisted MOVPE for InGaN with high indium content (pages 2846–2849)

      Norihito Kawaguchi, Ken-nosuke Hida, Yoshihiro Kangawa, Yoshinao Kumagai and Akinori Koukitu

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405067

    46. Growth and characterization of InGaN double heterostructures for optical devices at 1.5–1.7 mm communication wavelengths (pages 2850–2854)

      Tatsuo Ohashi, Tetsuya Kouno, Mizue Kawai, Akihiko Kikuchi and Katsumi Kishino

      Version of Record online: 10 SEP 2004 | DOI: 10.1002/pssa.200405107

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